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STATE OF ART OF ACRYLATE RESISTS: AN OVERVIEW OF POLYMER STRUCTURE AND LITHOGRAPHICMOREAU WM.1983; OPTICAL ENGINEERING; ISSN 0091-3286; USA; DA. 1983; VOL. 22; NO 2; PP. 181-184; BIBL. 76 REF.Article

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AN ELECTROTHERMAL MODEL FOR THRESHOLD SWITCHING IN THIN AMORPHOUS CHALCOGENIDE FILMSSHAW MP; SUBHANI KF.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 233-248; BIBL. 42 REF.Article

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A SELF-ALIGNMENT PROCESS FOR AMORPHOUS SILICON THIN FILM TRANSISTORSKODAMA T; TAKAGI N; KAWAI S et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 187-189; BIBL. 12 REF.Article

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NOTE ON THE THICKNESS DEPENDENCE OF THE THRESHOLD VOLTAGE OF AMORPHOUS SWITCHING DEVICES.BARANCOK D; DIESKA P.1976; ACTA PHYS. SLOV.; TCHECOSL.; DA. 1976; VOL. 26; NO 4; PP. 277-280; BIBL. 6 REF.Article

THE ON-STATE OF THE AMORPHOUS SEMICONDUCTOR DEVICE.BUCKLEY WD.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 11; PP. 743-746; BIBL. 4 REF.Article

ON THE RELIABILITY OF AMORPHOUS CHALCOGENIDE SWITCHING DEVICESSCHUOCKER D; RIEDER G.1978; J. NON-CRYST. SOLIDS; NLD; DA. 1978; VOL. 29; NO 3; PP. 397-407; BIBL. 16 REF.Article

AMORPHOUS SEMICONDUCTOR DEVICES: MEMORY AND SWITCHING MECHANISMLAKSHMINARAYAN KN; SRIVASTAVA KK; PANWAR OS et al.1981; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; IND; DA. 1981; VOL. 27; NO 1; PP. 16-19; BIBL. 9 REF.Article

REVERSIBLE MONOPOLAR SWITCHING IN VANADIUM-TELLURITE GLASS THRESHOLD DEVICESGATTEF E; DIMITRIEV Y.1979; PHILOS. MAG., B; GBR; DA. 1979; VOL. 40; NO 3; PP. 233-242; BIBL. 35 REF.Article

AMORPHOUS-SILICON FET ARRAY FOR LCD PANELKATOH K; YASUI M; KUNIYASU S et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 14; PP. 506-507; BIBL. 10 REF.Article

ELECTRIC FIELD LINE BENDING LIMITED ELASTOMER DEFORMATION IN AN A-SE TYPE DEFORMOGRAPHIC LIGHT WAVE.LAKATOS AI.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2346-2355; BIBL. 9 REF.Article

NEW AMORPHOUS-SILICON ELECTRICALLY PROGRAMMABLE NONVOLATILE SWITCHING DEVICEOWEN AE; LE COMBER PG; SARRABAYROUSE G et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 2; PP. 51-54; BIBL. 17 REF.Article

Commutation à basse température de chalcogénures vitreux semiconducteursKVASKOV, V. B; PAROL, N. V; IOFIS, N. A et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 11, pp 2079-2082, issn 0015-3222Article

FURTHER STUDIES OF MEMORY SWITCHING IN COPPER-CALCIUM-PHOSPHATE GLASS DEVICESMORIDI GR; HOGARTH CA.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 44; NO 3; PP. 297-304; BIBL. 10 REF.Article

THE TEMPERATURE DEPENDENCE OF THE NON-OHMIC CURRENT AND SWITCHING CHARACTERISTICS OF A CHALCOGENIDE GLASS.THOMAS CB.1976; J. PHYS. D; G.B.; DA. 1976; VOL. 9; NO 18; PP. 2587-2596; BIBL. 34 REF.Article

DISPOSITIFS SEMICONDUCTEURS AMORPHESADLER D.1978; USP. FIZ. NAUK; SUN; DA. 1978; VOL. 125; NO 4; PP. 707-730; BIBL. 5 REF.Article

MONOSTABLE SWITCHING IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORS.THOMAS CB; ROGERS BD; LETTINGTON AH et al.1976; J. PHYS. D; G.B.; DA. 1976; VOL. 9; NO 18; PP. 2571-2586; BIBL. 30 REF.Article

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